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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

Shenzhen Hongxinwei Technology Co., Ltd
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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

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Brand Name : FORTUNE

Model Number : FS8205A

Certification : ROHS

Place of Origin : TAIWAN

MOQ : 10PCS

Price : NEGOTIABLE

Payment Terms : T/T, Western Union

Supply Ability : 12000PCS/WEEK

Delivery Time : 2-3DAYS

Packaging Details : 3000PCS/REEL

rain-Source Voltag : 20A

Drain Current (Continuous) : 6A

ate-Source Voltag : ±12

Drain Current (Pulsed) *1 : 30A

Total Power Dissipation @TA=25oC : 1.5W

Total Power Dissipation @TA=75oC : 0.96W

Operating and Storage Temperature Range : -55 to +150 ℃

Thermal Resistance Junction to Ambient*2 : 83℃/W

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FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

1.Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

2.Features

RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications

3.Applications

Battery Protection
Load Switch
Power Management

4.SwitchingTest Circuit

FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

5.TSSOP-8L Dimension

FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

6.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service


Product Tags:

Enhancement Mode MOSFET

      

FS8205A MOSFET

      

20V 6A n channel mosfet

      
Wholesale FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A from china suppliers

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