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30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

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30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

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Brand Name : VISHAY

Model Number : SIRA04DP-T1-GE3

Certification : ROHS

Place of Origin : CHINA

MOQ : 10pcs

Price : Negotiable

Payment Terms : T/T, Western Union

Supply Ability : 120000

Delivery Time : 2-3Days

Packaging Details : 6000pcs/Reel

Transistor polarity : N-Channel

Number of channels : 1 Channel

Vds-Drain-source breakdown voltage : 30 V

Id-continuous drain current : 40 A

Rds On-Drain-source on resistance : 1.8 mOhms

Vgs-gate-source voltage : -16 V, 20 V

Vgs th- gate-source threshold voltage : 1.1 V

Qg-gate charge : 77 nC

Minimum operating temperature : -55 C

Maximum operating temperature : + 150 C

Pd-power dissipation : 62.5W

Channel mode : Enhancement

Transistor type : 1 N-Channel

Forward transconductance-minimum : 105 S

Fall time : 8 ns

Rise time : 10 ns

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SIRA04DP-T1-GE3 ELECTRONIC INTEGRATED CIRCUITS

THE PowerPAK PACKAGEThe PowerPAK package was developed around the SO-8package (figure 1). The PowerPAK SO-8 utilizes the samefootprint and the same pin-outs as the standard SO-8. Thisallows PowerPAK to be substituted directly for a standardSO-8 package. Being a leadless package, PowerPAK SO-8utilizes the entire SO-8 footprint, freeing space normallyoccupied by the leads, and thus allowing it to hold a largerdie than a standard SO-8. In fact, this larger die is slightlylarger than a full sized DPAK die. The bottom of the dieattach pad is exposed for the purpose of providing a direct,low resistance thermal path to the substrate the device ismounted on. Finally, the package height is lower than thestandard SO-8, making it an excellent choice forapplications with space constraints.

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

PowerPAK SO-8 SINGLE MOUNTING
The PowerPAK single is simple to use. The pin arrangement(drain, source, gate pins) and the pin dimensions are thesame as standard SO-8 devices (see figure 2). Therefore, thePowerPAK connection pads match directly to those of theSO-8. The only difference is the extended drain connectionarea. To take immediate advantage of the PowerPAK SO-8single devices, they can be mounted to existing SO-8 landpatterns

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

Q1. What is your terms of packing?

A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.

Q2. What is your MOQ?

A: We provide you small MOQ for each item, it depends your specific order!

Q3. Do you test or check all your goods before delivery?

A: Yes, we have 100% test and check all goods before delivery.

Q4: How do you make our business long-term and good relationship?

A:We keep good quality and competitive price to ensure our customers benefit ;

We respect every customer as our friend and we sincerely do business and make friends with them,It's not something that can be replaced.

Q5: How to contact us?
A: Send your inquiry details in the below,Click "Send"Now!!!


Product Tags:

62.5W N Channel MOSFET

      

30V Vds N Channel MOSFET

      

SIRA04DP-T1-GE3

      
Wholesale 30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 from china suppliers

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 Images

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